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Growth of SnSe single crystal via vertical vapor deposition method and characterization of its thermoelectric performance

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Abstract In this work, a vertical vapor deposition method was developed to grow SnSe single crystals. More than thirty single crystal particles were simultaneously obtained and the largest size could… Click to show full abstract

Abstract In this work, a vertical vapor deposition method was developed to grow SnSe single crystals. More than thirty single crystal particles were simultaneously obtained and the largest size could up to 15 × 15 × 10 mm3. The as-grown crystal is tested has nearly Sn: Se = 1: 1 stoichiometric ratio and demonstrates standard orthorhombic Pnma space group at room temperature. Electrical transport measurement shows the present SnSe single crystal has a largest electrical conductivity σ = 39.6 S cm−1 near Pnma- Cmcm phase transition temperature, and the maximum Seebeck coefficient S = 566 μVK-1 is taken place around 580 K. Thermal transport analysis implies SnSe single crystal exhibits a lowest total thermal conductivity ktot=0.44 Wm−1 K−1 near Pnma- Cmcm phase transition. Finally, it is calculated the figure of merit ZT has a largest value ∼1.0 around 800 K that implies SnSe single crystal is a promising middle- temperature TE material.

Keywords: deposition method; vertical vapor; single crystal; vapor deposition; snse single; crystal

Journal Title: Materials Research Bulletin
Year Published: 2020

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