LAUSR

Abstract In this work, amorphous Si films were prepared on 6H-SiC(0001) by PECVD and induced to be crystalline structure at 400 °C~700 °C by Ni to form c-Si/6H-SiC heterojunction. Raman and XRD results indicated that ɑ-Si films on 6H-SiC transforms to c-Si after 600 °C induced annealing, and the Si films with and preferred orientations have larger grain size and higher crystalline quality. TEM results indicated the c-Si films are polycrystalline structure with a lattice constant of 5.43 A, which are consistent with c-Si. It was demonstrated that Ni promotes the crystallization of the ɑ-Si films on 6H-SiC at low temperature significantly.