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Low level NO gas sensing properties of Cu doped ZnO thin films prepared by SILAR method

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Abstract We report the successful synthesis and characterization of Zn 1−x Cu x O (x = 0.05, 0.10, 0.15, 0.20) thin films prepared by a simple and facile Successive Ionic Layer Adsorption… Click to show full abstract

Abstract We report the successful synthesis and characterization of Zn 1−x Cu x O (x = 0.05, 0.10, 0.15, 0.20) thin films prepared by a simple and facile Successive Ionic Layer Adsorption and Reaction (SILAR) method. The nitrogen monoxide (NO) gas sensing properties of the Zn 1−x Cu x O sensors were studied systematically. The sensors were proved to have acceptable responses towards 20 ppb NO gas. Zn 0.90 Cu 0.10 O exhibited improved sensing performance at operating temperature of 55 °C compared to other samples. To improve sensor selectivity, a molecular zeolite filter was coated on the Zn 0.90 Cu 0.10 O sensor. The gas sensing results showed that the selectivity of intergrown zeolite filter coated Zn 0.90 Cu 0.10 O sensor enhanced significantly compared to uncoated sensors.

Keywords: thin films; silar method; films prepared; gas; sensing properties; gas sensing

Journal Title: Materials Letters
Year Published: 2018

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