LAUSR

Abstract Cu2ZnSnS4 (CZTS) thin films were synthesized by sulfurization of subsequently electrochemically deposited Cu/Sn/Zn metal precursors on Mo foil substrates in melted sulfur on air at the temperature of 440 °C close to the sulfur boiling point for 1 h. The films contain only CZTS phase with lattice parameters a = 5.422 ± 0.002 A and c = 10.811 ± 0.006 A and components at. % ratio: Cu/(Sn + Zn) = 1.05, Zn/Sn = 1.22, (Cu + Sn + Zn)/S = 0.93. The film surface is densely packed without cracks or pinholes. The obtained results show the practical ability to obtain CZTS thin films by a novel technically simple and low-cost liquid-based process.