LAUSR

Abstract We demonstrate improved photo detection properties in V x Sn 1−x Se 2 (x = 0, 0.15, 0.25, 0.5) ternary alloys by varying vanadium and tin contents. The performance of photo detectors was explored under 670 nm laser of power intensity 3 mW/cm 2 at 1 mV bias. The typical detector parameters such as responsivity, external quantum efficiency and detectivity were determined. The enhanced photodetection with significantly improved responsivity and fast response time of 600 ms is achieved by alloy engineering in V x Sn 1−x Se 2 (x = 0, 0.15, 0.25, 0.5) ternary alloy. This study can open a new pathway to tune the properties, important for producing tuneable high performance electronic devices.