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Abstract Self-assembled GaN pyramids were successfully fabricated on a SiNx layer that was grown in situ by metal-organic chemical vapor deposition. The diameter and height of a single pyramid was… Click to show full abstract
Abstract Self-assembled GaN pyramids were successfully fabricated on a SiNx layer that was grown in situ by metal-organic chemical vapor deposition. The diameter and height of a single pyramid was approximately 6–10 μm, and the structure had six (10–11) semi-polar facets. According to micro-photoluminescence measurements obtained at different excitation power densities, the polarization field on the sidewall of the pyramids containing InGaN/GaN multiple quantum wells was weak. The mechanism of atomic migration was deduced from the cathodoluminescence results. This type of structure can possibly be used for the fabrication of light-emitting diodes with multi-color emission.
Journal Title: Materials Letters
Year Published: 2018
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