LAUSR

Abstract At the present work, a novel two-stage method for the synthesis of zinc oxide (ZnO) films with silicon quantum dots embedded (SiQDs-ZnO) is reported. The experimental procedure consisting on ZnO matrix produced by the sol-gel technique and silicon quantum dots (Si-QDs) synthesized by a green synthesis is described. The incorporation of the Si-QDs on the ZnO films was obtained by spin coating followed by a post-deposition air annealing at 400 °C. The XPS results show that the Si-QDs were successfully embedded in the ZnO matrix. The effect of the tunable bandgap (Eg) of the ZnO with the addition of Si-QDs was obtained which is consistent with the Burstein-Moss effect. The enhancement of the photoluminescence (PL) of the ZnO films with the increment of Si content is presented.