LAUSR

Abstract Diamond, a wide band gap semiconductor material, has been attracting interest in several fields from electrics and optics to biomedicine and quantum computing due to its outstanding properties. These properties of diamond are related to its unique lattice and optically active defect centers. In this paper, we present a detailed study of the temperature-dependent linewidth and energy shift for two zero-phonon lines at 503.5 nm (3H center) and 741 nm (GR1 center). We also discuss the uses and properties of electron-photon coupling and zero-phonon lines. The results show that with the increasing temperature, both centers red-shifted and broadened, and the intrinsic defects of the GR1 center were mainly controlled by the homogeneous broadening mechanism, while the inhomogeneous broadening mechanism of the 3H center was probably caused by local stress.