LAUSR

Abstract Graphene-PbSe Schottky photodiodes were constructed by transferring a monolayer graphene sheet onto the surface of PbSe thin films. In order to improve the device performances, oxygen sensitization of PbSe was adopted in the fabrication process. Responsivity and detectivity of the device fabricated with pristine PbSe were 6.2 mA/W and 2.4 × 1011 cm Hz1/2/W under zero bias. Responsivity and detectivity of the device fabricated with sensitized PbSe were 67 mA/W and 6.8 × 1012 cm Hz1/2/W under zero bias. Significant increase in both responsivity and detectivity confirmed the great impact on device performances introduced by the oxygen-sensitization of PbSe. With a response time of millisecond level, outstanding photoresponse along with fast response speed were achieved in as-fabricated graphene-PbSe Schottky photodiode.