LAUSR

Abstract In this work, Bi0.5Sb1.5Te3 single crystal doped with 6 mol% ZnTe was fabricated using a vertical Bridgman method. A region about 20 × 70 mm2 in dimensions along (0 0 1) cleavage plane is obtained. The as-grown crystal exhibits remarkable anisotropy of TE properties that parallel and perpendicular to (0 0 1) in 300–480 K temperature range. It is found the highest power factor PF∥(0 0 1)= ~50 μWcm-1K−2 and PF⊥(0 0 1)= ~18 μWcm-1K−2 are obtained, and the total thermal conductivities for both directions are κ∥(0 0 1) = 1.8 Wm-1K−1 and κ⊥(0 0 1) = 0.8 Wm-1K−1. Thus, the peak figure of merit ZT∥(0 0 1) = 1.05 and ZT⊥(0 0 1) = 0.9 are realized, which might expand its application scope compared with the commercial Bi2Te3-based TE materials.