LAUSR

Abstract We report doping of thin (~60 nm) amorphous silicon (a-Si) on glass substrate to form n + polycrystalline silicon on glass in selective regions using Monolayer doping (MLD) via Flash Lamp Annealing (FLA). The phosphorus monolayer was formed on the exposed regions of SiO2 patterned a-Si, through functionalization with chemically bound Diethyl vinylphosphonate (DVP) dopant molecules. The samples were capped with SiO2 and annealed using a single xenon flash pulse (5.0 J/cm2, 250 μs) to simultaneously crystallize a-Si, incorporate and activate phosphorus dopants. SIMS results show an average concentration of 8x1019 cm−3 in the 60 nm of thin silicon on glass. Electrical results show a resistivity of ~6.60x10−2 Ω.cm in doped regions. N-channel field effect transistor devices are successfully demonstrated using this MLD-FLA technique.