LAUSR

In this study, we introduced mesh-patterned Ag grid (width: 1520m) to enhance the light output power of near ultraviolet (385nm) AlGaN-based light emitting diode (LEDs). The Ag grid was intentionally agglomerated by annealing at 500C for 1min in air. The output performance of AlGaN-based LEDs fabricated with Ag-grid/indium tin oxide (ITO) electrodes was compared with those with ITO electrode. At a wavelength of 385nm, the samples had transmittances of 54.274.1%. LEDs with the Ag-grid/ITO contacts exhibited lower forward voltages of 3.323.57V at 20mA than LED with the ITO electrode (3.64V). The LEDs with the Ag-grid/ITO electrodes exhibited 15.615.9% higher light output (at 400mW) than that with the ITO electrode. Based on finite-difference time-domain simulations, the improved output performance is briefly described and discussed. Display Omitted Agglomerated Ag grid used to improve the light output power of AlGaN-based LEDs.Agglomerated Ag grid samples had transmittances of 54.274.1% at 385nm.LEDs with Ag grid show much lower forward voltages than LEDs with ITO contact.LEDs with Ag grid yield higher output power than LEDs with ITO electrode