Abstract Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further… Click to show full abstract
Abstract Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further optimize the growth, the substrate after implantation was analyzed via atomic force microscopy, which indicated that sputtering depth had a strong influence on the subsequent nanowire growth. Lower beam voltage accelerations led to beam defocusing and thereafter better growth, while focused, high-acceleration beams led to a larger sputtering depth, worse growth and more tilted nanowire growth. The optical quality of the nanowires was evaluated using spatially resolved photoluminesence measurements at room temperature.
               
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