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Abstract Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states. Polarons in the crystalline phase have… Click to show full abstract
Abstract Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states. Polarons in the crystalline phase have small trapping energies of the order of 0.2 eV. In the amorphous phase, structural precursor sites cause deep hole trapping with trapping energies exceeding 1.2 eV making these states likely candidates for positive charging in oxide films.
Keywords:
amorphous hfo2;
hole trapping;
positive charging;
hfo2 al2o3
Journal Title: Microelectronic Engineering
Year Published: 2017
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Journal Title: Microelectronic Engineering
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!