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Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging

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Abstract Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states. Polarons in the crystalline phase have… Click to show full abstract

Abstract Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states. Polarons in the crystalline phase have small trapping energies of the order of 0.2 eV. In the amorphous phase, structural precursor sites cause deep hole trapping with trapping energies exceeding 1.2 eV making these states likely candidates for positive charging in oxide films.

Keywords: amorphous hfo2; hole trapping; positive charging; hfo2 al2o3

Journal Title: Microelectronic Engineering
Year Published: 2017

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