Photo from wikipedia
Abstract Ultra-thin interfacial silicon oxide layers are grown by microwave-based plasma oxidation at temperatures below 200 °C. The influence of plasma gas composition and plasma pulsing on layer properties is tested.… Click to show full abstract
Abstract Ultra-thin interfacial silicon oxide layers are grown by microwave-based plasma oxidation at temperatures below 200 °C. The influence of plasma gas composition and plasma pulsing on layer properties is tested. The oxides are compared to standard thermally grown oxide and wet chemical oxide. Layer properties are evaluated by x-ray photo electron spectroscopy and are electrically characterized by means of TiN/HfO 2 /SiO 2 high-k metal gate stacks.
Keywords:
ultra thin;
high metal;
microwave based;
plasma oxidation;
thin interfacial;
based plasma
Journal Title: Microelectronic Engineering
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Microelectronic Engineering
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!