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The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term… Click to show full abstract
The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term exponential DOS, representing the tail and deep states. The parameters for the tail and deep states are Ntail=1.61019cm3, Ttail=540K, Ndeep=6.51016cm3 and Tdeep=4058K respectively. Furthermore, the DOS from C-V provides a good fit with current-voltage characteristics, using the multiple trap and release model. Display Omitted Capacitance-voltage measurements of Nb doped ZnO thin-film transistorsExtraction of sub-band gap density of states using multi-frequency methodComparison of capacitance-voltage and current-voltage density of states
Journal Title: Microelectronic Engineering
Year Published: 2017
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