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A systematic study of a capacitorless 1T-DRAM fabricated in 28nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z2-FET memory cell features a large current… Click to show full abstract
A systematic study of a capacitorless 1T-DRAM fabricated in 28nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z2-FET memory cell features a large current sense margin and small OFF-state current at 25C and 85C. Moreover, low power consumption during state 1 writing is achieved with ~0.5V programming voltage. These specifications make the Z2-FET an outstanding candidate for low-power eDRAM applications. Display Omitted
Keywords:
fdsoi technology;
power;
dram;
low power
Journal Title: Microelectronic Engineering
Year Published: 2017
Link to full text (if available)
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Journal Title: Microelectronic Engineering
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!