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Abstract Multilevel states are clearly distinguished in TiN/Ti/HfO2/W RRAM devices by programming sequential voltage ramps and trains of pulses. It has been shown that the filamentary conductance has a continuous… Click to show full abstract
Abstract Multilevel states are clearly distinguished in TiN/Ti/HfO2/W RRAM devices by programming sequential voltage ramps and trains of pulses. It has been shown that the filamentary conductance has a continuous dependence on the current compliance employed during the SET process and the maximum voltage applied during the RESET process. The LRS conductance is determined by the current compliance, while the HRS is given by the RESET pulse amplitude. The obtained results suggest that the studied devices can be employed as electronic synaptic devices in neuromorphic circuits.
Journal Title: Microelectronic Engineering
Year Published: 2018
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