Abstract The dielectric properties of YCTO bulk capacitors were investigated as a function of temperature from 25 °C to 150 °C and at microwave frequencies in comparison to a SiO2 bulk sample.… Click to show full abstract
Abstract The dielectric properties of YCTO bulk capacitors were investigated as a function of temperature from 25 °C to 150 °C and at microwave frequencies in comparison to a SiO2 bulk sample. The results confirm the high-k character of the YCTO ceramic, in addition to the low AC conductivity, namely e′ = 40.1 and σ = 6 × 10−8 S cm−1 at 1 MHz, and show a weak frequency and temperature (25 °C–150 °C) dependence. A temperature coefficient value of −601 ppm°C−1 for the dielectric constant (TCe′) was estimated at 100 kHz. In the GHz regime, a comparison with bulk SiO2 confirms the higher YCTO dielectric permittivity. These results demonstrate high-k YCTO ceramic as a very promising material with high potentiality for electronic applications.
               
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