Abstract Photochemical vapor generation (PVG) of bismuth was accomplished in a simple flow–injection system with a standard Hg low-pressure tube lamp and a coiled Teflon reactor. The influence of a… Click to show full abstract
Abstract Photochemical vapor generation (PVG) of bismuth was accomplished in a simple flow–injection system with a standard Hg low-pressure tube lamp and a coiled Teflon reactor. The influence of a reaction medium flow rate (irradiation time) and composition was investigated using a miniature diffusion flame atomizer and high-resolution continuum source atomic absorption spectrometry. Combination of 40% (v/v) acetic acid, 1.25% (v/v) formic acid and a metal sensitizer at a flow rate of 3 mL min−1 (irradiation time of 90 s) was found optimal. The use of various metals as sensitizers was studied to initiate and enhance PVG substantially. The evident positive effect was found for four metal cations and the enhancement effect was in the following order: Cu2+
               
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