LAUSR

Nano-structured phase masks offer intriguing possibilities in electron-beam shaping. The fabrication of such phase masks is typically achieved by focused (Ga+-)ion beam milling of thin membranes. To overcome the problem of Ga implantation in the phase mask, we explore the fabrication of silicon-nitride phase masks using thermal scanning probe lithography combined with wet and dry etching. The functionality of the phase masks is demonstrated by generation of electron Vortex and Bessel beams. Major benefit of thermal scanning probe lithography in addition to the absence of ion implantation is the high accuracy and control over the patterned structure and depth.