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Abstract The paper reports the results of a study based on experimental data and finite element simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in short… Click to show full abstract
Abstract The paper reports the results of a study based on experimental data and finite element simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in short circuit condition. The study focuses on the failure observed during the short circuit of these devices when the test voltage is larger than 350 V. In this failure mode, the energy involved is quite low and the time to failure is
Keywords:
operated short;
failure;
short circuit;
gan power
Journal Title: Microelectronics Reliability
Year Published: 2019
Link to full text (if available)
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Journal Title: Microelectronics Reliability
Year Published: 2019
Link to full text (if available)
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recommendations!