Abstract Silicon carbide (SiC) power devices suitable for high-frequency, high-power density and high-temperature applications, and thus gain a broad prospect in the electric vehicle (EV) charger area. However, the high-frequency… Click to show full abstract
Abstract Silicon carbide (SiC) power devices suitable for high-frequency, high-power density and high-temperature applications, and thus gain a broad prospect in the electric vehicle (EV) charger area. However, the high-frequency switching of SiC devices under high-power application challenges the electromagnetic compatibility (EMC) of the power module. Noises generated from high-frequency switching need to be analyzed and suppressed. This paper introduces the configuration of a 30 kW All-SiC power module designed for EV charger, then reveals the interference source analysis. Based on the interference analysis, a double π electromagnetic interference (EMI) filter is added, intended for this All-SiC power module. Experimental results show that the All-SiC power module achieves excellent efficiency over a wide power range. Meanwhile, the conducted EMI measurement is reported to verify the effectiveness of EMC design.
               
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