LAUSR

Abstract Layout and profile adjustments are presented based on TCAD simulation to improve the inverse-mode performances of silicon-germanium heterojunction bipolar transistor (SiGe HBT). Then the single event transient (SET) and total ionizing dose (TID) sensitivity of the optimized devices are investigated. The results indicate that profile optimizations result in better enhancement of the inverse-mode performances but also greater changes of the radiation responses. Most of all, the optimized Ge profile in base may lead to opposite impacts on SET and TID responses due to the change of local electric field in base caused by Ge grading.