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Abstract The stability and reliability at high temperature of Ti3SiC2 based ohmic contacts on p-type 4H-SiC (0001) 4°-off substrates were studied. The contact was grown from Ti100-xAlx alloys annealed at… Click to show full abstract
Abstract The stability and reliability at high temperature of Ti3SiC2 based ohmic contacts on p-type 4H-SiC (0001) 4°-off substrates were studied. The contact was grown from Ti100-xAlx alloys annealed at high temperature (from 900 °C to 1200 °C). The Specific Contact Resistance (SCR) at room temperature and at high temperature (up to 600 °C) was in the 10−4–10−5 Ω.cm2 range. A Schottky barrier height of 0.71 to 0.85 eV was calculated for the set of samples. After aging period at 600 °C for 1500 h, the SCR was very stable for Al contents x
Journal Title: Microelectronics Reliability
Year Published: 2020
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