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Abstract Electrical properties of epitaxial La 2 O 3 /germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La 2 O 3 passivation layers. For… Click to show full abstract
Abstract Electrical properties of epitaxial La 2 O 3 /germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La 2 O 3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage ( C - V ) characteristics becomes negligibly small and the interface trap density ( D it ) is estimated to be less than 10 12 cm −2 eV −1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.
Journal Title: Materials Science in Semiconductor Processing
Year Published: 2017
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