LAUSR

Abstract In this work, we have reported the electrical transport properties of two-dimensional molybdenum disulfide (MoS 2 ) nanosheets prepared by supercritical fluid method. Drop-casting technique has been used to make MoS 2 thinfilm. The surface morphology and crystallinity of as-prepared MoS 2 are studied using TEM, AFM, Raman and X-ray diffraction analyses. The observation of non-linear current-voltage ( I-V ) characteristics has been analyzed with different current conduction mechanisms such as Schottky barrier (SB), space-charge limited conduction, Fowler-Nordheim tunneling, and Poole-Frenkel conduction. Clear symmetricity in I-V curves confirms that charge-transport is not influenced by SB. However, all other transport mechanisms are to be found responsible for the non-linearity. The charge carrier mobility of the device is determined as ~1530 cm 2 /V s which is the highest value among supercritical fluid processed MoS 2 to-date. The presence of bulk counterpart in MoS 2 is accountable for such anomalous transport behavior and it is supported by Raman mapping analysis, evidently. Overall, our results demonstrate the understanding of the fundamental charge transport mechanisms in MoS 2 thinfilm that can be the essential factors in development of various MoS 2 based electronic devices and their applications.