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Abstract A maskless etching technique that is useful for manufacturing solar cells and microelectronics was examined using surface discharge plasma operated at atmospheric pressure. In this study, in order to… Click to show full abstract
Abstract A maskless etching technique that is useful for manufacturing solar cells and microelectronics was examined using surface discharge plasma operated at atmospheric pressure. In this study, in order to investigate the obvious etching characteristics of Si using surface discharge plasma, we observed the grooves obtained by etching Si substrates under He/CF4 and Ar/CF4 conditions. The etching rate using Ar was faster than when using He. Further, the choice of gas was found to influence the direction along which etching progressed. Based on the results, the characteristics and mechanisms of Si etching were discussed.
Journal Title: Materials Science in Semiconductor Processing
Year Published: 2017
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