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Abstract In an attempt to facilitate annealing assisted self assembly, we have grown amorphous ZnS films using rapid vacuum evaporation technique and followed by air annealing at an elevated temperature… Click to show full abstract
Abstract In an attempt to facilitate annealing assisted self assembly, we have grown amorphous ZnS films using rapid vacuum evaporation technique and followed by air annealing at an elevated temperature for longer duration. It has been found that ultra long microwires were formed as a consequence of air annealing assisted asymmetric mass flow. However on further increase in annealing temperature the microwires were found to be squeezed, forming larger macromolecules. XRD studies revealed the gradual transition from amorphous to crystalline phase with preferential orientation along (008) hexagonal phase. Photoluminescence studies revealed multiple defect transition caused by annealing.
Journal Title: Materials Science in Semiconductor Processing
Year Published: 2018
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