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Abstract Lead sulfide nanocrystal films, comprising of well faceted 350 nm cubic-nanocrystals are tailored by ion-flux controlled chemical bath deposition at 50 °C to 80 °C bath temperatures. These possess compact (111) oriented… Click to show full abstract
Abstract Lead sulfide nanocrystal films, comprising of well faceted 350 nm cubic-nanocrystals are tailored by ion-flux controlled chemical bath deposition at 50 °C to 80 °C bath temperatures. These possess compact (111) oriented nanocubic morphology and exhibit significantly improved electrical and opto-electronic properties as necessary for emerging next generation solar energy conversion applications. All films are of p-type nature and concurrently possess high carrier mobility (µ), high hole concentration (p) and low electrical resistivity (ρ) at room temperature. In particular, for films grown at 75 °C, high values of µ = 29.3 cm2V–1s–1, p = 8.1×1017 cm–3 and ρ = 0.26 Ω cm are observed on the same nanocubic film. At high temperatures (T > 150 K), the charge transport is governed by thermally activated band conduction and nearest-neighbour hopping conduction. However, at lower temperatures (T
Journal Title: Materials Science in Semiconductor Processing
Year Published: 2018
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