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Topographic characterization of thin film field-effect transistors of 2,6-diphenyl anthracene (DPA) by fractal and AFM analysis

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Abstract Presented article is aimed at experimental investigation of the scalable nature of the 3-D surface micromorphology of 2,6-diphenyl anthracene (DPA). Films under study were evaporated in vacuum chamber on… Click to show full abstract

Abstract Presented article is aimed at experimental investigation of the scalable nature of the 3-D surface micromorphology of 2,6-diphenyl anthracene (DPA). Films under study were evaporated in vacuum chamber on various substrates. The surfaces of the films were probed by means of atomic force microscopy (AFM) and obtained images were processed numerically to determine fractal characteristics. Performed analysis revealed that DPA samples followed allometric scale behavior at nanometer range, characterized with only one scaling exponent varying in the range from 2.53 to 2.92 depending on the deposition details.

Keywords: anthracene dpa; diphenyl anthracene; analysis; topographic characterization; afm; characterization thin

Journal Title: Materials Science in Semiconductor Processing
Year Published: 2018

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