LAUSR

Abstract Aim of the present contribution is to review several results obtained by the application of surface photovoltage spectroscopy method to low dimensional semiconductors. Photo-induced electronic transitions have been detected in: heterostructures based on III-nitrides, Si-based nanostructures (nanowires and nanocrystals) and nanoporous Ge layers. The effect of two-dimensional electron gas and of quantum confinement on the energy of band-to-band transitions in these structures has been studied. The results show that Surface Potovoltage Spectroscopy is a flexible and non-destructive method capable to reveal phase changes, Burstein Moss effects, doping-related features, light trapping and quantum confinement effects in low dimensional structures that can be useful for several optoelectronic applications.