LAUSR

Abstract In the work, novel indium yttrium oxide (InYO) thin films are prepared by an environmentally friendly aqueous solution process. Y element is added to suppress the generation of oxygen vacancies. The effect of Y doping on the performance and stability of nontoxic water-induced InYO thin film transistors (TFTs) is firstly examined. With the increase of Y doping contents, off-state current is decreased and mobility decreases from 15.8 to 11.7 cm2 V−1 s−1. Furthermore, the stability under positive bias stress is also obviously improved. The device with 2 mol% Y element shows an optimized electrical performance and good stability, including mobility of 12.8 cm2/V s, threshold voltage of 1.4 V, subthreshold swing of 0.33 V/decade and threshold voltage shift of 2.31 V under positive voltage stress of 5 V for 10,000 s. The performance improvement is attributed to the decrease of oxygen vacancies and the decline of interface trap density by Y addition.