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Abstract A theoretical model of the Cd/Zn interdiffusion during the growth of different sequences of ZnTe/CdTe layers was developed. The model can predict the values of the growth parameters needed… Click to show full abstract
Abstract A theoretical model of the Cd/Zn interdiffusion during the growth of different sequences of ZnTe/CdTe layers was developed. The model can predict the values of the growth parameters needed to obtain desired composition profiles from specific ZnTe/CdTe multilayer growth sequences. With these simulations as a guide, CdxZn1-xTe graded composition samples with different Cd profiles and thicknesses were grown. A good agreement was found, demonstrating the possibility of preparing different and predictable Cd content profiles in CdxZn1-xTe graded thin films by the simple isothermal close space sublimation method.
Journal Title: Materials Science in Semiconductor Processing
Year Published: 2019
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