LAUSR

Abstract We report promising results regarding the possible use of AlN or Al2O3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al2O3 films are grown by repeated deposition and subsequent low temperature (200 °C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al2O3 is ∼ 3 MV/cm or ∼ 5 MV/cm respectively. By depositing an additional SiO2 layer by plasma enhanced chemical vapor deposition at 300 °C on top of the AlN or Al2O3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al2O3/SiC interfaces.