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Controllable fabrication and field emission properties of cactus-like Cu2-xSe@Cu2-xSe nanowalls via the vertical secondary growth

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Abstract The cactus-like Cu2-xSe@Cu2-xSe nanowalls was prepared by secondary growth method using Cu2-xSe nanowalls as substrate. This special nanostructure comprises Cu2-xSe nano spines neatly growing on the sharp edges of… Click to show full abstract

Abstract The cactus-like Cu2-xSe@Cu2-xSe nanowalls was prepared by secondary growth method using Cu2-xSe nanowalls as substrate. This special nanostructure comprises Cu2-xSe nano spines neatly growing on the sharp edges of Cu2-xSe nanowalls. Reaction time has a powerful effect on the formation and morphologies of Cu2-xSe nanowalls. XRD analysis indicated the cubic berzelianite phase of Cu2-xSe. The cactus-like Cu2-xSe@Cu2-xSe nanowalls presents a better field electron emission performance than the first synthesized Cu2-xSe nanowalls, possessing the turn-on field 2.04 V/μm and the enhancement factor of 5181. The formation mechanism of cactus-like Cu2-xSe@Cu2-xSe nanowalls was discussed and proposed. The results indicated that the cactus-like Cu2-xSe@Cu2-xSe nanowalls can be used as a promising material in field emission applications.

Keywords: xse nanowalls; cactus like; xse; cu2 xse; like cu2

Journal Title: Materials Science in Semiconductor Processing
Year Published: 2019

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