LAUSR

Abstract This paper presents the lattice disorder-induced effect by oxygen ion implantation in GaN epitaxial layers. Oxygen ion implantation in GaN epitaxial layers is done with fluencies 5 × 1014 cm−2 and 5 × 1015 cm−2 at 120 keV energy on two different pieces of a GaN sample. Unimplanted and implanted GaN layers are investigated by High-resolution X-ray diffraction (HRXRD), Optical absorption and Raman spectroscopy. The in-plane and out of plane lattice parameters (i.e. a and c) of the distorted and undistorted region in the GaN samples are determined from the respective XRD peak positions. Due to the incorporation of oxygen ions in GaN layers up to implantation depth, lattice parameters are extended, as a result, the samples are under hydrostatic strain. Raman spectroscopic studies on the unimplanted and oxygen ion-implanted GaN samples are done by green and ultra-violet (UV) lasers. Raman spectroscopy results indicate that the broadening of the E2 (High) peak and intensity of A1 (LO) peak increases with increasing fluence. A doublet in A1 (LO) peak is found in UV excited Raman spectra in unimplanted and implanted GaN samples. The occurrence of the A1 (LO) doublet is due to surface defects and phonon-plasmon coupled-mode generated due to nonequilibrium photoexcited carriers. In this article, the origin of doublet has been studied and reported.