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Abstract The electroluminescence from the amorphous gallium-indium-zinc oxide (a-GIZO)/p-GaN heterojunction light-emitting diodes (LEDs) were demonstrated. The heterojunction LEDs showed a current flow under both forward and reverse bias voltages. The… Click to show full abstract
Abstract The electroluminescence from the amorphous gallium-indium-zinc oxide (a-GIZO)/p-GaN heterojunction light-emitting diodes (LEDs) were demonstrated. The heterojunction LEDs showed a current flow under both forward and reverse bias voltages. The light emissions were observed at around 410 nm (originating from p-GaN) and ~450–800 nm (originating from interfacial layer and/or from a-GIZO), which were particularly pronounced under reverse bias condition. As a result, the standard white light with the chromaticity coordinate of (0.2899, 0.3034) was obtained.
Journal Title: Materials Science in Semiconductor Processing
Year Published: 2020
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