LAUSR

Abstract In this paper electrical analysis GO/TiO2/Si MOS junction was performed. Current–voltage (I–V) characteristics of diode were analyzed at 298–398 K. Several parameters such as ideality factor (η), barrier height ( φ B ), rectification ratio (RR), series and shunt resistances (RS& Rsh) were estimated from I–V plots. The results showed that the MOS junction obeyed the thermionic emission phenomenon. In addition, capacitance – voltage (C–V) were measured at voltage range (−2Vto+2 V), at temperature range of (233–363 K) and at different frequencies. At low frequency 10 Hz revealed that negative capacitance of capacitor. A negative capacitance is due to an inductive behavior of studied materials. Moreover, at higher frequency, f = 2 × 107 Hz, capacitance increases slightly with the increase of temperature and the interface states (Nss) cannot pursue ac signal and gives the geometrical capacitance values.