Photo from archive.org
Abstract Passivation of n-type and p-type monocrystalline CZ Si wafers (both polished and textured) with silicon oxide layers prepared by thermal (TO), chemical (CO) and plasma (PO) techniques have been… Click to show full abstract
Abstract Passivation of n-type and p-type monocrystalline CZ Si wafers (both polished and textured) with silicon oxide layers prepared by thermal (TO), chemical (CO) and plasma (PO) techniques have been extensively investigated from the measurement of minority carrier lifetime (τ) by transient electrical photoresponse method, density of interface states (NSS) measurement by capacitance – voltage study and silicon oxidation states by X-ray photoelectron spectroscopy (XPS) study of the SiO2/Si interface. It has been observed that NSS and τ have an inverse relation but the dependence is not linear. The method (TO, CO or PO) of oxide layer development has been found to play a crucial role to control the passivation of the c-Si wafer surface. It has been observed that the thermally grown oxide layer (TO) is superior among three oxide layers for all the different c-Si surfaces. Very low density of interface states (
Journal Title: Materials Science in Semiconductor Processing
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!