LAUSR

Abstract In this study, methyl-green (MG) organic dye layer was formed on the front side of a n-Si semiconductor via low–cost drop coating method and twenty (20) Au/MG/n-Si/Ag diodes have been identically fabricated. The fundamental diode parameters such as barrier height (BH, ∅ b ) , ideality factor (IF, n) and series resistance (Rs) were determined from the current–voltage (I–V) measurements by using ln(I)–V characteristics, Cheung's functions and modified Norde's functions at room temperature. The values of BH and IF calculated from ln(I)-V were varied from 0.744 to 0.862 eV and from 1.10 to 1.64 for the 20 Au/MG/n-Si/Ag diodes, respectively. The experimental BH and IF distributions calculated from the ln(I)–V characteristics and Cheung's functions were fitted by a Gaussian distribution function. The statistical analysis yielded a mean IF value of 1.26 with standard deviation (σ) of 0.173 and a mean BH value of 0.817 eV with σ of 0.031 eV from the ln (I)–V characteristics, respectively. It was seen that there is an agreement between the BH values calculated from ln(I)-V and other two methods. The Rs obtained from Norde's function were compared with those from Cheung's functions.