LAUSR

Abstract In this paper, it is found that the residual GaN has a great impact on the two-step-grown GaN on sapphire substrates. The samples which are grown with a conventional system baking process present a higher dislocation density than those without the baking process. It is found that, without baking, residual GaN accumulate in the MOCVD reactor, decompose, form the nucleation site on the sapphire substrate during the process of high-temperature surface treatment, and thus influence the initial nucleation process of GaN layer growth. Based on this understanding, a novel growth method to improve the quality and stability of two-step-grown GaN on sapphire is proposed, in which the TMGa and NH 3 were added in the high-temperature surface treatment process. With this method, as low as 3.71 × 10 7 cm−3 and 1.94 × 10 8 cm−3 for screw and edge dislocation density of GaN epitaxial films were achieved on sapphire.