Abstract This study used the hydrothermal method to synthesize ZnSnO3 and ZnSnO3/rGO composite material with hierarchical and porous structure. ZnSnO3 was attached on the surface of rGO or between the… Click to show full abstract
Abstract This study used the hydrothermal method to synthesize ZnSnO3 and ZnSnO3/rGO composite material with hierarchical and porous structure. ZnSnO3 was attached on the surface of rGO or between the lamellar layers to form a physically boned heterojunction semiconductor composite material. The ZnSnO3/rGO sensing material shows better gas-sensing properties than ZnSnO3 sensor to acetone. Compared with the operating temperature of ZnSnO3 sensor (425 °C), the optimal operating temperature of ZnSnO3/rGO sensor was only 350 °C, the sensitivity to 50 ppm acetone gas was 80.371, and the response/recovery time was only 4 /27 s. The improved gas-sensing performance of ZnSnO3/rGO sensing material can be ascribed to the large specific surface area, hierarchical, porous structure, and unique heterojunction of the composite material. The high sensitivity, fast response/recovery characteristics, excellent selectivity and stability of ZnSnO3/rGO make it an ideal sensing material for detecting acetone.
               
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