LAUSR

Abstract CuCr2O4 thin films grown by physical vapour deposition were studied in order to evaluate their potential as absorber material for the next generation of concentrated solar power plants. A series of Cu-Cr-O thin films was deposited by reactive ion beam sputtering. The Cr/Cu ratio in the sputter target is demonstrated as the most important parameter to achieve the intended film stoichiometry. In-air annealing at 800°C leads to structural transformations of the as-deposited films and results in phase compositions according to those expected from the ternary Cu-Cr-O phase diagram. Tetragonal CuCr2O4 with 98.6 at.% phase purity regarding the solid film constituents is obtained for the appropriate Cr/Cu ratio in the sputter target. CuCr2O4 thin films absorb light in the entire solar spectral range from 300 nm to 2500 nm. Their energy gap is found to be