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Abstract A monolithically integrated four-channel directly modulated laser (DML) array working at the 1.3-μm band is demonstrated. The laser was manufactured by using the techniques of selective area growth (SAG)… Click to show full abstract
Abstract A monolithically integrated four-channel directly modulated laser (DML) array working at the 1.3-μm band is demonstrated. The laser was manufactured by using the techniques of selective area growth (SAG) of the upper separate confinement heterostructure (Upper-SCH) and modified butt-joint method. The fabricated device showed stable single mode operation with the side mode suppression ratio (SMSR) >35 dB, and high wavelength accuracy with the deviations from the linear fitted values 7 GHz was obtained, which may be suitable for 40 GbE applications in the 1.3-μm band.
Journal Title: Optics Communications
Year Published: 2017
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