Abstract Using an inner-frequency-modulated semiconductor laser, two parallel Mach–Zehnder delay-line interferometers and feedback control loop technique, we generate microwaves. The frequency of the Littrow-structure semiconductor laser is modified by a… Click to show full abstract
Abstract Using an inner-frequency-modulated semiconductor laser, two parallel Mach–Zehnder delay-line interferometers and feedback control loop technique, we generate microwaves. The frequency of the Littrow-structure semiconductor laser is modified by a lead zirconate titanate actuator that covers a wideband modulating range. One long delay-line interferometer generates microwaves; the second short delay-line interferometer controls the linearity of the modulate laser and assures microwave stability by a feedback loop. Thus, this method, in theory, should produce more than one hundred GHz microwave. We experimentally generated 1.743 GHz to 5.134 GHz microwaves. This technology opens a new path for developments in microwave photonics.
               
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