LAUSR

Abstract Fluorescent optical fiber temperature sensors require high-performance silicon-based single photon detectors with large-scale on-chip integration capabilities to improve the detection accuracy of the system. Therefore, this paper proposes a gate-controlled single photon avalanche diode(GC-SPAD) with high photon-detection-probability(PDP). In order to verify the high photon-detection-probability, a comparative analysis is conducted between GC-SPAD and traditional SPAD(T-SPAD) of the same size. Silvaco-TCAD is used to verify the basic principles of SPAD. The T-SPAD device and the GC-SPAD device are manufactured based on the standard 0. 18 μ m bipolar complementary-metal-oxide-semiconductor double-diffused-metal-oxide-semiconductor(BCD) process By building a passive quenching circuit, important electrical parameters of two types of SPAD device can be obtained. The test results show that the avalanche breakdown voltages of T-SPAD and GC-SPAD are 11.55V and 11.7V respectively. Under the experimental conditions of 20 °C(over-bias voltage of 2V), the PDP of T-SPAD( 20 μ m ) in the wavelength range of 440nm ∼ 720 nm reaches 22.43%, and the PDP reaches a peak(32.27%) at a wavelength of 500 nm. The dark count rate(DCR) of the device is 2.54kHz. The PDP of GC-SPAD( 20 μ m ) reaches 29.55% in the wavelength range of 440nm ∼ 720 nm, and the response peak of the device is at 500nm(42%). The DCR of GC-SPAD is only 1.11kHz. Hence, compared with other SPAD devices of the same type, the PDP and the DCR of GC-SPAD device has obvious advantages.