LAUSR

Abstract In this study, a patterned InP/ZnS quantum dots photoresist (QDPR) film has been prepared via a laser-assisted route after the QDPR mixture solution composed of the as-synthesized InP/ZnS quantum dots (QDs) and the photoresist was spin-coated on the glass substrate at a room temperature for 60 min. The effects of the thickness of the film and the mass ratio of InP/ZnS QDs to photoresist on the photoluminescent quantum yield (PLQY) were investigated to confirm the potential application of InP/ZnS QDPR film in color conversion. The experimental results show that PLQY can be enhanced by up to 35.8% and the color coordinate can be changed from (0.26, 0.13) to (0.58, 0.24) with the assistance of 5.5 pairs of distributed Bragg reflectors (DBRs). The remarkable PLQY enhancement and color coordinate variation is mainly attributed to the DBR structures, which could integrate the emission light from the InP/ZnS QDPR color converter layer excited by the blue OLEDs and considerably reduce the transmittance of the blue light. On the basis of the results, the patterned InP/ZnS QDPR film, as the color conversion source, can exhibit a potential application in the next-generation full-color displays.