LAUSR

Abstract Electrical transport properties of graphene can be modulated by different controlled doping methods in order to make it useful for practical applications. Here we report a comparative study of electron-beam (e-beam) irradiated and ultraviolet (UV) irradiated graphene field effect transistors (FETs) for different doses and exposure times. We observed red shift in Raman spectra of graphene under e-beam irradiation which represents n-type doping while a divergent trend has been identified for UV irradiations which signify p-type doping. These results are further confirmed by the electrical transport measurements where the Dirac point shifts towards negative backgate voltage (i.e. n-type doping) upon e-beam exposure and shifted towards positive backgate voltage (i.e. p-type doping) under ultraviolet irradiation. Our approach reveals the dual characteristics of graphene FETs under these irradiation environments.