LAUSR

Abstract The homogeneity and agglomeration in graphene based photodetector plays an important role in the photoconduction. The influence of sodium dodecyl sulphate (SDS) solution in nitrogen doped graphene oxide (N-GO) is studied based on the photoresponsivity behaviour. One step hydrothermal method and drop casting technique are utilized to obtain N-GO photodetectors. High photoresponsivity about 1000 folds is achieved in N-GO prepared with SDS solution (N-GO/SDS) compared to the N-GO prepared without SDS solution. Raman spectrum also revealed a high intense D and G band as well as a slightly broaden 2D band due to sp 2 hybridization. The fabricated device has exhibited wide range of responsivity to infrared (IR) laser 974 nm pulse and illumination. Real time current measurement in N-GO and current–voltage ( I-V ) characteristics in N-GO/SDS showed a significant photoconduction due to laser 974 nm illumination. The external quantum efficiency (EQE) in the N-GO/SDS solution is about 394830% compared to N-GO prepared without SDS, which is only 272%. The evaluated fall time at frequency modulation of 0.1 and 1 Hz for direct current (dc) bias voltage of 5.0 V found to be shorter compared to that of 2.5 V, whereas the fall time at high frequency modulation at 5000 Hz exhibited similar time around 77 μs.